Thin-film transistors (TFT) were fabricated at room-temperature (RT) utilizing
zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. The
common bottom-gate TFTs were fabricated on commercially available thermal
silicon oxide (100 nm thick) coated silicon wafers. A total of 100 devices were
made in a 1 inch square area as 10 × 10 matrix, by varying the channel
width and length, between 5 µm and 300 µm. Output and transfer
characteristics of the fabricated devices were extracted from a semiconductor
parameter analyzer. A threshold voltage (VTh) of 10 V and an ION/IOFF ratio of 1 × 10-5 were obtained. The impact of
channel dimensions on the device performance was investigated, confirming that
the saturation current (Isat) is directly proportional to the channel width (W), and
inversely proportional to channel length (L), in agreement with
field effect device theory.